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US 2011/0254057 A1Published application
Nitride based semiconductor device and method for manufacturing of the same
AssigneeSamsung Electro-Mechnics Co., Ltd.
InventorsWoo Chul Jeon, Ki Yeol Park, Young Hwan Park, Jung Hee Lee
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Abstract
Disclosed herein is a nitride based semiconductor device. The nitride based semiconductor device includes: a base substrate; an epitaxial growth layer disposed on the base substrate and having a defect generated due to lattice disparity with the base substrate; a leakage current barrier covering the epitaxial growth layer while filling the defect; and an electrode part disposed on the epitaxial growth layer.
Claims12
A nitride based semiconductor device, comprising:
- a base substrate;
- an epitaxial growth layer disposed on the base substrate and having a defect generated due to lattice disparity with the base substrate;
- a leakage current barrier covering the epitaxial growth layer while filling the defect;
- and
- an electrode part disposed on the epitaxial growth layer.
2 more elements
A method for manufacturing a nitride based semiconductor device, comprising:
- preparing a base substrate;
- forming an epitaxial growth layer on the base substrate by using the base substrate as a seed layer;
- forming a leakage current barrier covering the epitaxial growth layer while filling a defect of the epitaxial growth layer;
- and
- forming an electrode part on the epitaxial growth layer.
2 more elements
Dependencies are inferred from the claim text.