Substrate processing apparatus for performing plasma process
AssigneeTokyo Electron Limited
InventorsSunao MURAOKA, Jun Yamashita, Atsushi Ueda
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AssigneeTokyo Electron Limited
InventorsSunao MURAOKA, Jun Yamashita, Atsushi Ueda
Estimating the term…
A substrate processing apparatus for performing a plasma process on a target substrate includes a process container configured to accommodate the target substrate. The apparatus includes a gas feed passage configured to supply a process gas into the process container and an exhaust passage configured to exhaust gas from inside the process container. The apparatus further includes a plasma generation mechanism configured to generate plasma of the process gas inside the process container and a metal component to be exposed to plasma inside the process container. The metal component is provided with a silicon film that coats at least a portion thereof to be exposed to plasma and to suffer an intense electric filed generated thereabout.
A substrate processing apparatus for performing a predetermined plasma process on a target substrate, the apparatus comprising:
A substrate processing apparatus for performing a plasma process on a target substrate, the apparatus comprising:
The substrate processing apparatus according to clam 13, wherein the apparatus further comprises a liner disposed inside the lower wall, and the annular support portion extending inward further relative to the liner without being covered by the liner.
Dependencies are inferred from the claim text.