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US 2011/0237056 A1Published application
Method for making junction and processed material formed using the same
AssigneePanasonic Corporation
InventorsYuichiro SASAKI, Cheng-Guo JIN, Bunji MIZUNO
Life of this patent
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Abstract
An object of this invention is to provide a method for making a junction which is simple in the process, high in the throughput, and can make a shallow junction with high accuracy. After the suitable state of a substrate surface adapted to the wavelength of an electromagnetic wave to be applied has been formed, the electromagnetic wave is applied to electrically activate impurities so that the excited energy is effectively absorbed within the impurity thin film, thereby effectively making a shallow junction.
Claims18
-16. (canceled)
A method for forming a shallow junction comprising the steps of:
- forming an amorphous layer at a shallow region in a silicon substrate by irradiating a plasma containing He and a plasma containing particles to be served as impurities to a silicon substrate;
- and
- applying light having an intensity peak at a wavelength of 375 nm or longer on the silicon substrate so that said shallow region is excited selectively and the shallow junction is formed electrically activated with the impurity.
Dependencies are inferred from the claim text.