Method for manufacturing capacitor of semiconductor device and capacitor of semiconductor device manufactured thereby

A method of manufacturing a capacitor of a semiconductor device, the method comprising:

• forming an etch-stop layer and a sacrificial layer on a substrate, the substrate including a transistor and a contact plug electrically connected to a drain region of the transistor;
• forming a hole in the sacrificial layer to expose the etch stop layer in a region of the etch-stop layer corresponding to the contact plug;
• conformally forming a high k dielectric layer on the sacrificial layer, including on sidewalls of the hole, and the exposed etch-stop layer;
• performing a first heat treatment;
• forming a first lower conductive layer on the high k dielectric layer after the first heat treatment;
• performing a plasma treatment and a second heat treatment;
• etching the high-k dielectric layer and the first lower conductive layer to remove the high k dielectric layer and the first lower conductive layer from an upper surface of the sacrificial layer and from a bottom portion of the hole such that the contact plug is exposed, thereby forming a high k dielectric pattern and first lower conductive layer pattern on the sidewalls of the hole;
• forming a second lower conductive layer that fills the hole;
• removing upper portions of the first lower conductive layer pattern and second lower conductive layer to provide a recess region and to expose an upper portion of the high-k dielectric pattern;
• forming a blocking insulating pattern in the recess region, wherein the removing of the upper portions of the first lower conductive layer pattern and the second conductive layer to provide the recess region is carried out such that the blocking insulating pattern formed in the recess region has a greater thickness than a thickness of the high k dielectric pattern;
• removing the sacrificial layer to expose an outer surface of the high k dielectric pattern;
• conformally forming an upper electrode to cover the high k dielectric pattern and the blocking insulating pattern;
• and
• performing a third heat treatment.