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US 2011/0215479 A1Published application
Feature Patterning Methods and Structures Thereof
AssigneeInfineon Technologies AG
InventorsThomas Schulz, Sergei Postnikov
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Abstract
Methods of patterning features, methods of manufacturing semiconductor devices, and semiconductor devices are disclosed. In one embodiment, a method of patterning a feature includes forming a first portion of the feature in a first material layer. A second portion of the feature is formed in the first material layer, and a third portion of the feature is formed in a second material layer.
Claims20
A semiconductor device, comprising:
- a first material layer and a second material layer disposed over a workpiece, the second material layer being adjacent the first material layer;
- a first portion of a feature being disposed in the first material layer;
- a second portion of the feature being disposed in the first material layer proximate the first portion of the feature;
- and
- a third portion of the feature being disposed in the second material layer, wherein the third portion of the feature couples the first portion of the feature to the second portion of the feature.
2 more elements
A conductive line comprising:
- a first portion of the conductive line in a first material layer;
- a second portion of the conductive line in the first material layer, the second portion of the conductive line being proximate to the first portion of the conductive line;
- and
- a third portion of the conductive line in a second material layer, the third portion of the conductive line connecting the first portion of the conductive line with the second portion of the conductive line, the second material layer being adjacent the first material layer.
1 more element
A semiconductor device comprising:
- a first portion of a feature arranged in a first material layer;
- a second portion of the feature arranged in the first material layer, the second portion of the feature being proximate to the first portion of the feature;
- and
- a third portion of the feature arranged in a second material layer, the third portion of the feature connecting the first portion of the feature with the second portion of the feature, the second material layer being adjacent the first material layer and wherein the first material layer and the second material layer are laterally embedded in an insulating layer.
1 more element
Dependencies are inferred from the claim text.