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AssigneeUniversity of Utah Research Foundation
InventorsGerald B. Stringfellow, Alexander D. Howard, David C. Chapman
Estimating the term…
The use of surfactants that do not themselves act as dopants and are isoelectronic with either the group III or group V host atoms during OMVPE growth significantly reduces the incorporation of background impurities such as carbon, oxygen, sulfur and/or silicon. For example, the use of the surfactants Sb or Bi significantly reduces the incorporation of background impurities such as carbon, oxygen, sulfur and/or silicon during the OMVPE growth of III/V semiconductor materials, for example GaAs, GaInP, and GaP layers. As a result, an effective method for controlling the incorporation of impurity atoms is adding a minute amount of surfactant during OMVPE growth.
A method of forming a semiconductor device, the method comprising forming a layer of a group III material and a group V material at a selected temperature in the presence of a surfactant, whereby forming at the selected temperature in the presence of the surfactant causes the layer to have a substantially reduced impurity concentration as compared to a similarly formed layer that is formed in the absence of the surfactant.
A method of forming a semiconductor device, the method comprising forming a layer of a group III material and a group V material at a selected temperature in the range of 650° C. to 775° C. and in the presence of a surfactant, whereby the surfactant causes the layer to have a substantially reduced concentration of an unintentional dopant as compared to a similarly formed layer that is formed in the absence of the surfactant, wherein the unintentional dopant is selected from a group consisting of carbon, oxygen, silicon, sulfur, and combinations thereof.
Dependencies are inferred from the claim text.