Method of producing a structure by layer transfer

A method of producing a semiconductor structure by transfer of a layer from a donor substrate having a surface bonded to a surface of a receiver substrate, which comprises:

• providing an embrittlement zone beneath the donor substrate surface to define the layer to be transferred,
• treating the surface of either the donor substrate, the receiver substrate or both to increase bonding strength between the two substrates after bonding, with the treating controlled to provide a higher increase in bonding strength at a central area of the substrates compared to the bonding strength at a peripheral area of the substrates,
• bonding of the donor substrate to the receiver substrate by contact of their surfaces, and
• detaching the layer from the donor substrate at the embrittlement zone to form a semiconductor structure comprising the transfer layer and the receiving substrate and in which the surface of the receiver substrate, except for a peripheral crown, is provided with the transfer layer,
• wherein the peripheral area of the substrates has a width that is at least equal to that of the crown but less than 10 mm.