Exposure mask and method for manufacturing same and method for manufacturing semiconductor device

A method for manufacturing an exposure mask used to transfer a pattern defined by exposure onto a wafer, comprising:

• forming a resist film on a structure having a pattern forming film formed on a substrate;
• exposing the resist film;
• developing the resist film after the exposure to selectively remove the resist film;
• and
• selectively removing the pattern forming film by etching using the selectively removed resist film as a mask,
• the exposing the resist film including drawing pattern elements in a pattern formation region, the pattern elements having a size not smaller than a resolution limit after being transferred onto the wafer, and drawing sub-pattern elements in a sub-pattern formation region, the sub-pattern elements having a size smaller than the resolution limit after being transferred onto the wafer, the sub-pattern formation region being spaced from the pattern formation region by a distance having no optical proximity effect on the pattern.

A method for manufacturing a semiconductor device, comprising:

• forming a resist film on a wafer;
• and
• exposing the resist film using an exposure mask,
• a mask including a pattern formation region having a pattern formed and an sub-pattern formation region having a sub-pattern formed on a substrate being implemented as the exposure mask, the sub-pattern formation region being spaced from the pattern formation region by a distance having no optical proximity effect on the pattern,
• the exposing including transferring the pattern onto the wafer and not transferring the sub-pattern onto the wafer.