US 2010/0304278 A1 · Method for Fabricating a Phase Shift Mask Using a Binary Blank

Abstract

A method for fabricating a phase shift mask using a binary blank is disclosed. A light shielding pattern is formed on a transparent substrate in which a main cell region and a frame region are defined. A phase shift layer is formed that buries the light shielding pattern on the transparent substrate. A phase shift pattern is formed by removing a portion of the phase shift pattern present on the light shielding pattern. A resist layer is formed on the light shielding layer and the phase shift pattern. A resist pattern is formed that selectively exposes the light shielding pattern and the phase shift pattern in a main cell region by patterning the resist layer. The transparent substrate is exposed by etching the light shielding pattern in the main cell region using the resist pattern as an etch mask, and the resist pattern is removed.

Claims11

Dependent claims

A method for fabricating a phase shift mask using a binary blank, comprising:

preparing a binary blank in which a light shielding layer is formed on a transparent substrate and a resist layer is formed on the light shielding layer;
forming a resist pattern that exposes a portion of a surface of the light shielding layer by patterning the resist layer;
forming a light shielding pattern that exposes a portion of a surface of the transparent substrate by etching the exposed portion of the light shielding layer using the resist pattern as an etch mask;
burying a portion of the transparent substrate exposed by the light shielding pattern with a phase shift layer;
and
forming a phase shift pattern by removing a portion of the phase shift layer present on the light shielding pattern.

3 more elements

A method for fabricating a phase shift mask using a binary blank, comprising:

forming a light shielding pattern on a transparent substrate in which a main cell region and a frame region are defined;
forming a phase shift layer that buries the light shielding pattern on the transparent substrate;
forming a phase shift pattern by removing a portion of the phase shift pattern present on the light shielding pattern;
forming a resist layer on the light shielding layer and the phase shift pattern;
forming a resist pattern that selectively exposes the light shielding pattern and the phase shift pattern in the main cell region;
exposing the transparent substrate by etching the light shielding pattern in the main cell region using the resist pattern as an etch mask;
and
removing the resist pattern.

5 more elements

Dependencies are inferred from the claim text.

Method for Fabricating a Phase Shift Mask Using a Binary Blank

Life of this patent

Method for Fabricating a Phase Shift Mask Using a Binary Blank

Life of this patent

Abstract

Claims11