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US 2010/0301452 A1Published application
Integrated nano-farad capacitors and method of formation
AssigneePower Gold LLC
InventorJames Jen-Ho Wang
Life of this patent
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Abstract
A high value capacitance per unit area capacitor is fabricated on a substrate 1 by converting a portion of a primary function anti-reflecting conducting layer 36 to a high value dielectric layer 37 by partially oxidizing the conducting layer to form the dielectric layer. The resultant combination is sandwiched between two metal layer electrodes 35 and 55 to complete the capacitor structure.
Claims16
A method of fabricating an integrated capacitor on a semiconductor wafer, comprising the steps of:
- a. providing a substrate having a first surface, said substrate configured for fabricating said integrated capacitor;
- b. forming a first metal layer above said substrate, said first metal layer serving as said integrated capacitor first electrode and said integrated capacitor first electrode interconnect:
- c. forming a conductive layer coincident with said first metal layer, said conductive layer having a primary function;
- d. patterning a capacitor area on a predefined portion of said conductive layer;
- e. converting said predefined portion of said conductive layer coincident with said patterned capacitor area, to a secondary function;
- and
- f. forming a second metal layer serving as said integrated capacitor second electrode and said integrated capacitor second electrode interconnect.
4 more elements
A semiconductor integrated capacitor, comprising:
- a substrate configured for fabricating the integrated capacitor;
- a first capacitor electrode;
- a second capacitor electrode;
- a conductive layer;
- and
- a dielectric layer adjacent to and derived proportionately from said conductive layer, said dielectric layer and said conductive layer residing between said first and second capacitor electrodes.
3 more elements
A method for fabricating a capacitor on an electronic assembly, comprising the steps of:
- a. providing a substrate;
- b. forming a first metal layer above said substrate, said first metal layer serving as said capacitor first electrode and said integrated capacitor first electrode interconnect:
- c. forming a conductive layer coincident with said first metal layer, said conductive layer having a primary function;
- d. patterning a capacitor area on a predefined portion of said conductive layer;
- e. converting said predefined portion of said conductive layer coincident with said patterned capacitor area, to a secondary function;
- and
- f. forming a second metal layer serving as said integrated capacitor second electrode and said integrated capacitor second electrode interconnect.
4 more elements
Dependencies are inferred from the claim text.