Positive resist composition, method of forming resist pattern

Abstract

The positive resist composition including a base material component (A) which exhibits increased solubility in an alkali developing solution under action of acid and an acid generator component (B) which generates acid upon exposure, the positive resist composition characterized in that in those cases where a resist film is formed on a substrate using the positive resist composition and is then subjected to a selective exposure and developing to form a hole pattern, followed by a bake treatment, a bake treatment temperature (Tf), at which the size of the hole is reduced by 10%, as compared to the size of the hole before the bake treatment, is at least 100° C.; and also that in those cases where a resist film is formed on a substrate using the positive resist composition and is then subjected to a selective exposure and developing to form a hole pattern, followed by the entire surface exposure and then by a bake treatment, a bake treatment temperature (Tf′), at which the size of the hole is reduced by 10%, as compared to the size of the hole before the bake treatment, is at least 18° C. lower than the Tf.

Dependencies are inferred from the claim text.