Methods for particle removal during integrated circuit device fabrication

A method of manufacturing an integrated circuit (IC), comprising:

• providing a substrate having a semiconducting surface;
• forming a plurality of devices on or in said semiconducting surface;
• depositing at least one dielectric contact layer over said semiconducting surface;
• processing said dielectric contact layer to form a plurality of apertures in said dielectric contact layer for forming contacts to said plurality of devices, said processing comprising at least one micromask-prone process;
• and
• subsequent to said processing step, cryogenically treating said dielectric contact layer;
• wherein said treating step removes at least a portion of a plurality of particles deposited on or in said plurality of apertures during said processing step and maintains said plurality of apertures, wherein said plurality of particles are generated from micromask features resulting from said micromask-prone process.

A method of manufacturing an integrated circuit (IC), comprising:

• providing a substrate having a semiconducting surface;
• depositing at least one dielectric masking layer over a portion of said semiconducting surface;
• processing said dielectric masking layer to form a plurality of apertures in said dielectric masking layer and said semiconducting surface, said processing comprising at least one micromask-prone process;
• and
• subsequent to said processing step, cryogenically treating said substrate;
• wherein said treating step removes at least a portion of a plurality of particles deposited on or in said plurality of apertures during said processing step and maintains said plurality of apertures, wherein said plurality of particles are generated from micromask features resulting from said etch process, and wherein said micromask-prone process comprises at least one of a lithography process, an etch process, and a post-etch cleaning process.