Substrate processing method
AssigneeTokyo Electron Limited
InventorsKosuke OGASAWARA, Kiyohito Ito
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Abstract
In a substrate processing method of processing a substrate that includes an oxide layer as a mask layer and a silicon layer as a target layer to be processed, the silicon layer is etched while depositing a deposit on a surface of the oxide layer by a plasma generated from a mixed gas of a fluorine-based gas, a bromine-based gas, O2 gas, and SiCl4 gas to secure a thickness of the mask layer.
Claims14
A substrate processing method of processing a substrate that includes an oxide layer as a mask layer and a silicon layer as a target layer to be processed, the method comprising:
- etching the silicon layer while depositing a deposit on a surface of the oxide layer by a plasma generated from a mixed gas of a fluorine-based gas, a bromine-based gas, O2 gas, and SiCl4 gas to secure a thickness of the mask layer.
A substrate processing method of processing a substrate that includes an oxide layer as a mask layer and a silicon layer as a target layer to be processed, the method comprising:
- etching the silicon layer by a plasma generated from a mixed gas of a fluorine-based gas, a bromine-based gas, and O2 gas;
- and
- depositing a deposit on a surface of the oxide layer by a plasma generated from a mixed gas of a bromine-based gas, O2 gas, and SiCl4 gas, wherein the etching and the depositing are alternately repeatedly performed.
Dependencies are inferred from the claim text.