Method for manufacturing semiconductor device

Abstract

A method for manufacturing a semiconductor power device may includes: performing a grinding process on a back side of a wafer, performing a first plasma process and a rapid thermal process sequentially after performing the grinding process, performing a second plasma process after performing the rapid thermal process, and performing a metal thin film process after performing the second plasma process. The method for manufacturing a semiconductor device may be capable of preventing a peeling effect from occurring on a wafer surface by removing hydrogen from the wafer surface by controlling surface roughness to a desired level by treating the wafer surface using hydrogen plasma and a rapid thermal process (RTP) after subjecting a backside of the wafer to a grinding process.

Dependencies are inferred from the claim text.