Method of recycling an epitaxied donor wafer

A method for producing two or more semiconductor structures using a single donor wafer, the method comprising the steps of:

• providing a donor wafer comprising a support substrate, and a hetero-epitaxial layer comprising a buffer layer having a mesh parameter that is different from that of the support substrate,
• treating the donor wafer by removing at least part of the hetero-epitaxial layer without removing the buffer layer to form a treated donor wafer having a surface that is sufficiently smooth for growth of at least one epitaxial layer thereon;
• growing at least one epitaxial layer of semiconductor material on the hetero-epitaxial layer of the donor wafer;
• transferring a portion of the at least one epitaxial layer to a receiver wafer to form a first semiconductor structure which comprises the receiver wafer and a semiconductor layer of the at least one epitaxial layer portion on the receiver wafer and a second semiconductor structure which comprises the support substrate, the buffer layer and the remaining, non-transferred portion of the epitaxial layer;
• treating the second semiconductor structure by removing at least part of the remaining, non-transferred portion of the epitaxial layer without removing the buffer layer to form a treated semiconductor structure having a surface that is sufficiently smooth for growth of at least one further epitaxial layer thereon;
• growing a further epitaxial layer on the treated semiconductor structure;
• and
• recycling the treated semiconductor structure for transfer of a portion of the further epitaxial layer;
• wherein the treating of the second semiconductor structure is conducted under the same conditions as the treating of the donor wafer to facilitate processing by not having to use different conditions.