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US 2010/0167493 A1Published application
Method of manufacturing semiconductor device
AssigneeNEC Electronics Corporation
InventorsKeiji SAKAMOTO, Takashi OGURA, Masashige MORITOKI
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Abstract
A method of manufacturing a semiconductor device includes a process of forming a STI trench in a substrate, a process of forming a thermal oxide film on a sidewall and a bottom surface of the STI trench, a process of performing a plasma treatment on a surface of the thermal oxide film that is located at a bottom portion of the STI trench, and a process of forming an insulating film in the STI trench using a CVD method
Claims8
A method of manufacturing a semiconductor device, comprising:
- forming a shallow trench isolation (STI) trench in a substrate;
- forming a thermal oxide film on a sidewall and a bottom surface of the STI trench;
- performing a plasma treatment on the thermal oxide film that is located at a bottom portion of the STI trench;
- and
- forming an insulating film in the STI trench using a chemical vapor deposition (CVD) method,
- wherein, in the performing of the plasma treatment, an arrival density of active specifies that are generated by plasma is larger at the bottom portion than at the sidewall.
3 more elements
Dependencies are inferred from the claim text.