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US 2010/0167491 A1Published application
Method for fabricating flash memory device
OwnerMin-Gon Leeinventor
Life of this patent
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Abstract
A method for fabricating a flash memory device includes forming device isolation films in a semiconductor substrate, defining active regions between the device isolation films, and patterning floating gates on the semiconductor substrate to correspond to the active regions. Portions where the active regions and the floating gates are not overlap with one another are within reference offset ranges, respectively.
Claims20
A method comprising:
- forming device isolation films in a semiconductor substrate and defining active regions between the device isolation films;
- and then
- patterning floating gates over the semiconductor substrate to correspond to the active regions,
- wherein portions where the active regions and the floating gates are not overlapped with one another are within reference offset ranges, respectively.
1 more element
A method comprising:
- forming device isolation films in a semiconductor substrate to define active regions in the semiconductor substrate located between the device isolation films;
- and then
- forming polysilicon over the semiconductor substrate;
- forming a first photoresist pattern over the polysilicon;
- and then
- forming floating gates over the semiconductor substrate corresponding to the active regions by etching the polysilicon using the first photoresist pattern as a mask,
- wherein the floating gates where the active regions and the floating gates are not overlapped with one another are within reference offset ranges, respectively.
4 more elements
A method comprising:
- forming device isolation films in a semiconductor substrate and defining active regions between the device isolation films to have a first area;
- and then
- patterning floating gates over the semiconductor substrate to correspond to the active regions,
- wherein portions where the active regions and the floating gates are not overlapped with one another are within reference offset ranges, respectively.
1 more element
Dependencies are inferred from the claim text.