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US 2010/0167489 A1Published application
Mim capacitor and method of fabricating the same
OwnerSeok-Joon Ohinventor
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Abstract
A method of fabricating an MIM capacitor may include a first electrode formed on and/or over a semiconductor substrate, a dielectric layer composed of an oxygen material formed on and/or over the first electrode under an oxygen atmosphere. A second electrode is formed on and/or over the dielectric layer. Because the dielectric layer is formed under an oxygen atmosphere, an oxygen composition ratio of the dielectric layer is increased.
Claims22
A method comprising:
- forming a first electrode over a semiconductor substrate;
- and then
- forming a dielectric layer over the first electrode under an oxygen atmosphere;
- and then
- forming a plurality of second electrodes over the dielectric layer.
2 more elements
A method comprising:
- forming a first metal layer as a first electrode over and contacting a semiconductor substrate;
- and then
- forming an oxide layer under an oxygen atmosphere as a dielectric layer over and contacting the first electrode;
- and then
- forming a second metal layer as a second electrode over and contacting the dielectric layer.
2 more elements
A method comprising:
- forming a lower electrode comprising a first metal layer over and contacting a semiconductor substrate;
- and then
- performing a thermal treatment on the semiconductor substrate including the lower electrode after forming the lower electrode;
- and then
- forming a doped oxide layer over and contacting the first metal layer after performing the thermal treatment;
- and then
- forming a plurality of upper electrodes comprising a second metal layer over and contacting the doped oxide layer,
- wherein the doped oxide layer is formed in an oxygen atmosphere.
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Dependencies are inferred from the claim text.