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US 2010/0167480 A1Published application
Method for Manufacturing Flash Memory Device
OwnerSeung Kwan PAEKinventor
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Abstract
The present invention relates to a method for fabricating a flash memory device capable of reducing charge loss. The method includes forming a gate pattern on a semiconductor substrate, forming a sidewall spacer layer on the gate pattern using SiO2, introducing nitrogen into the sidewall spacer layer to form a SiON film, and forming a capping film over the entire SiON film.
Claims19
A method for manufacturing a flash memory device, comprising:
- forming a gate pattern on a semiconductor substrate;
- forming a sidewall spacer layer on the gate pattern comprising SiO2;
- introducing nitrogen into the sidewall spacer layer to form a SiON film;
- and
- forming a capping film over the entire SiON film.
2 more elements
Dependencies are inferred from the claim text.