Method and system for determining semiconductor characteristics

A method for determining one or more characteristics of a partially processed integrated circuit, the method comprising:

• providing a substrate material, the substrate material being characterized by a first plurality of dimensions;
• forming one or more openings on the substrate material, the one or more opening being characterized by at least an opening characteristic;
• providing a polymer material, the polymer material overlaying the one or more openings, the polymer material being characterized by a predetermined amount;
• subjecting the polymer material to a predetermined condition, wherein the polymer material becomes a fluid polymer material after being subjected to the predetermined condition, the fluid polymer material consisting of a first portion and a second portion, the first portion being positioned within the one or more openings, the second portion overlaying the one or more openings;
• determining one or more filling characteristics of the fluid polymer material;
• and
• determining the opening characteristic, the opening characteristic being associated with the one or more filling characteristics.

A method for manufacturing integrated circuits comprising:

• providing a batch of semiconductor substrates for manufacturing integrated circuits;
• forming one or more openings on each of the substrates, each of the openings being characterized by a depth and an aspect ratio;
• providing a filling material for each of the substrates, the filling material consisting of a filling portion and a covering portion, the filling portion positioned within the one or more openings on each of the substrate, the covering portion overlaying the one or more openings on each of the substrate;
• determining a filling characteristic for each of the substrates, the filling characteristic being associated with a size of the filling portion;
• determining an opening characteristic for each of the substrates based on the filling characteristics, the opening characteristic being associated with the depth and aspect ratio;
• processing each of the substrates;
• and
• providing fully processed integrated circuits using each of the substrates.