Semiconductor device manufacturing method

Abstract

A semiconductor device manufacturing method includes: forming a first anti-reflective coating on a semiconductor wafer; forming a second anti-reflective coating on the first anti-reflective coating; forming a resist film on the second anti-reflective coating; selectively exposing the resist film to light; developing the resist film and the anti-reflective coatings after the light exposure; and processing the semiconductor wafer using as a mask a pattern of the resist film obtained by the development. The photosensitizer concentration of the first anti-reflective coating is higher than the photosensitizer concentration of the second anti-reflective coating.

Dependencies are inferred from the claim text.