US 2010/0167211 A1 · METHOD FOR FORMING FINE PATTERNS IN A SEMICONDUCTOR DEVICE

Abstract

A method for forming fine patterns in a semiconductor device includes forming a first mask layer over an etch target layer, forming a first pattern over the first mask layer, reducing a size of the first pattern, forming a first spacer on a side face of the first pattern, removing the first pattern and patterning the first mask layer using the first spacer as a mask and removing the first spacer. The method also includes oxidating a surface of the patterned first mask layer, forming the first mask layer with reduced size by removing the oxidated portion over the surface of the first mask layer, forming a second spacer on a side wall of the first mask layer and removing the first mask layer, and patterning the etch target layer using the second spacer as a mask.

Claims10

Dependent claims

A method for forming fine patterns in a semiconductor device, the method comprising:

forming a hard mask layer over an etch target layer;
forming a plurality of first patterns with a predetermined width and space over the hard mask layer;
reducing size of the first patterns;
forming first spacers on side walls of the first patterns and removing the first patterns;
patterning the hard mask layer using the first spacers as mask to form a hard mask patterns and removing the first spacers;
oxidating surfaces of the hard mask patterns;
removing the oxidated portion over the surfaces of the hard mask patterns;
forming second spacers on side walls of the hard mask patterns and removing the hard mask patterns;
and,
patterning the etch target layer using the second spacers as mask.

7 more elements

Dependencies are inferred from the claim text.

Method for forming fine patterns in a semiconductor device

Life of this patent

Method for forming fine patterns in a semiconductor device

Life of this patent

Abstract

Claims10