Pattern-correction supporting method, method of manufacturing semiconductor device and pattern-correction supporting program
OwnerKazuhiro TAKAHATA, Shoji MIMOTOGIinventors
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Abstract
Design data corresponding to a target layout pattern is created, a layout value of the created design data is changed, optical proximity correction is applied to a layout pattern obtained from the changed design data, a pattern on wafer formed on a wafer to correspond to the layout pattern is calculated by using a photomask on which the layout pattern subjected to the optical proximity correction is formed, and the pattern on wafer and the target layout pattern before the change of the layout value are compared.
Claims24
A pattern-correction supporting method comprising:
- creating design data corresponding to a target layout;
- changing a layout value of design data corresponding to a target layout;
- applying optical proximity correction to the changed design data;
- forming patterns on a wafer with the photomask on which the layout pattern subjected to the optical proximity correction is formed;
- comparing the pattern on wafer and the target layout pattern before the layout value is changed.
A pattern-correction supporting method comprising:
- creating design data corresponding to a target layout;
- changing a layout value of the created design data;
- applying optical proximity correction to the changed design data;
- increasing or decreasing a mask dimension specified value of the layout pattern subjected to the optical proximity correction;
- forming patterns on a wafer with the photomask on which the layout pattern after the optical proximity correction with the mask dimension specified value increased or decreased is formed;
- comparing the pattern on wafer and the target layout pattern before the layout value is changed.
A pattern-correction supporting method comprising:
- preparing a first layout corresponding to a first pattern, the first pattern is being target pattern to be formed on a substrate;
- changing the first layout to a second layout, the second layout is corresponding to a second pattern different from the first pattern;
- and
- applying optical proximity correction to the second layout.
A method of manufacturing a semiconductor device comprising:
- changing a layout value of design data corresponding to a target layout;
- applying optical proximity correction to the changed design data;
- forming patterns on a wafer with the photomask on which the layout pattern subjected to the optical proximity correction is formed;
- comparing the pattern on wafer and the target layout pattern before the layout value is changed;
- extracting the changed design data, a result of the comparison of which satisfies a desired condition;
- and
- transferring, onto a semiconductor substrate, a mask pattern obtained by applying the optical proximity correction to the extracted design data.
A pattern-correction supporting program for causing a computer to execute:
- acquiring design data corresponding to a target layout pattern;
- acquiring a layout value after change of the acquired design data;
- and
- comparing a pattern formed by using a photomask manufactured based on the design data after the change and an image of the target layout pattern obtained from the design data.
A pattern-correction supporting program for causing a computer to execute:
- preparing a first layout corresponding to a first pattern, the first pattern is being target pattern to be formed on a substrate;
- changing the first layout to a second layout, the second layout is corresponding to a second pattern different from the first pattern;
- and
- applying optical proximity correction to the second layout.
Dependencies are inferred from the claim text.