Deposition Apparatus and Substrate Manufacturing Method
AssigneeCanon Anelva Corporation
InventorTakayuki Moriwaki
Life of this patent
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Abstract
A deposition apparatus includes a vacuum chamber, a plasma gun adapted to emit a plasma onto a deposition material accommodated in the vacuum chamber, and a discharge gas supply unit adapted to supply a discharge gas to the plasma gun. The deposition apparatus comprises a mass flow controller adapted to change a flow rate of the discharge gas, and a control circuit which is connected to the mass flow controller and adapted to control, the change in flow rate by the mass flow controller, based on a predetermined setting.
Claims6
A deposition apparatus including a vacuum chamber, a plasma gun adapted to emit a plasma onto a deposition material accommodated in the vacuum chamber, and a discharge gas supply unit adapted to supply a discharge gas to the plasma gun, comprising:
- a mass flow controller adapted to change a flow rate of the discharge gas;
- and
- a control circuit which is connected to said mass flow controller and adapted to control, the change in flow rate by said mass flow controller, based on a predetermined setting.
A method of manufacturing a substrate on which a deposition material placed in a vacuum chamber is deposited by irradiating the deposition material with a plasma emitted by a plasma gun supplied with a discharge gas, comprising a step of:
- changing a flow rate of the discharge gas supplied to the plasma gun during the deposition of the deposition material.
Dependencies are inferred from the claim text.