Reducing High-Frequency Signal Loss in Substrates
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChewn-Pu Jou, Ho-Hsiang Chen
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Abstract
An integrated circuit structure includes a semiconductor substrate of a first conductivity type; and a depletion region in the semiconductor substrate. A deep well region is substantially enclosed by the depletion region, wherein the deep well region is of a second conductivity type opposite the first conductivity type. The depletion region includes a first portion directly over the deep well region and a second portion directly under the deep well region. An integrated circuit device is directly over the depletion region.
Claims31
An integrated circuit structure comprising:
- a semiconductor substrate of a first conductivity type;
- a depletion region in the semiconductor substrate;
- a deep well region substantially enclosed by the depletion region, wherein the deep well region is of a second conductivity type opposite the first conductivity type, and wherein the depletion region comprises a first portion directly over the deep well region and a second portion directly under the deep well region;
- and
- an integrated circuit device directly over the depletion region.
An integrated circuit structure comprising:
- a semiconductor substrate of a first conductivity type;
- a deep well region in the semiconductor substrate and having a top surface lower than a top surface of the semiconductor substrate, wherein the deep well region is of a second conductivity type opposite the first conductivity type;
- a voltage source connected to the deep well region;
- a radio frequency (RF) transformer directly over the deep well region;
- and
- a dielectric layer spacing the (RF) transformer apart from the top surface of the semiconductor substrate.
An integrated circuit structure comprising:
- a semiconductor substrate of a first conductivity type;
- a diode;
- a deep well region in the semiconductor substrate and directly under the diode, wherein the deep well region is of a second conductivity type opposite the first conductivity type;
- and
- a depletion region comprising a first portion directly over the deep well region and a second portion directly under the deep well region, wherein the first portion spaces the deep well region apart from the diode.
Dependencies are inferred from the claim text.