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US 2010/0164065 A1Published application
Capacitor of semiconductor device and method for manufacturing the same
AssigneeDongbu HiTek Co., Ltd.
InventorYong-Jun Lee
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Abstract
A capacitor of a semiconductor device and a method for manufacturing the same includes a lower metal layer on and/or over a semiconductor substrate; an insulating layer formed on and/or over the lower metal layer with step difference; and an upper electrode on and/or over the insulating layer pattern, wherein a top corner of the upper electrode is rounded so that a curvature pattern is formed on the top corner of the upper electrode.
Claims20
A method comprising:
- forming a photoresist pattern over an upper metal layer used for forming a capacitor of a semiconductor device;
- performing an etching process with respect to the photoresist pattern such that corners of the photoresist pattern are rounded;
- and
- etching the upper metal layer by using the photoresist pattern having rounded corners as a mask, thereby forming an upper electrode.
1 more element
A device comprising:
- a lower metal layer over a semiconductor substrate;
- an insulating layer pattern formed over the lower metal layer with step difference;
- and
- an upper electrode over the insulating layer pattern,
- wherein a top corner of the upper electrode is rounded so that a curvature pattern is formed on the top corner of the upper electrode.
2 more elements
Dependencies are inferred from the claim text.