Semiconductor device and method for manufacturing the same
OwnerYong Geun Leeinventor
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Abstract
A semiconductor device and a method for manufacturing the same are provided. The semiconductor device can include a semiconductor substrate including a trench, a first oxide layer in the trench, a second oxide layer filled in the trench to form an insulating layer, and a silicon nitride layer interposed between the first and second oxide layers. The silicon nitride layer can be etched such that the silicon nitride layer is recessed from top surfaces of the semiconductor substrate and the second oxide layer, thereby forming a divot at a top corner of the trench.
Claims16
A semiconductor device comprising:
- a semiconductor substrate including a trench;
- a first oxide layer in the trench;
- a silicon nitride layer on the first oxide layer in the trench;
- and
- a second oxide layer on the silicon nitride layer and filled in the trench to form an insulating layer;
- wherein a height of an uppermost surface of the silicon nitride layer is lower than both a top surface of the semiconductor substrate and a top surface of the second oxide layer, thereby forming a divot at a top corner of the trench.
A method for manufacturing a semiconductor device, the method comprising:
- forming a first silicon nitride layer on a semiconductor substrate;
- forming a trench in the semiconductor substrate by etching the first silicon nitride layer and the semiconductor substrate;
- forming a first oxide layer in the trench;
- forming a second silicon nitride layer on the first oxide layer such that the second silicon nitride layer is connected to the first silicon nitride layer;
- filling the trench with a second oxide layer;
- removing the first silicon nitride layer;
- and
- forming a divot by removing a portion of the second silicon nitride layer exposed at a top corner of the trench.
Dependencies are inferred from the claim text.