Back to results
US 2010/0164050 A1Published application
Robust structure for hvpw schottky diode
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsDah-Chuen HO, Chien-Shao TANG, Yu-Chang JONG, Zhe-Yi WANG
Life of this patent
Estimating the term…
Abstract
A high-voltage Schottky diode including a deep P-well having a first width is fanned on the semiconductor substrate. A doped P-well is disposed over the deep P-well and has a second width that is less than the width of the deep P-well. An M-type guard ring is formed around the upper surface of the second doped well, A Schottky metal is disposed on an upper surface of the second doped well and the N-type guard ring.
Claims22
A semiconductor device, comprising:
- a semiconductor substrate;
- a deep P-well formed on the semiconductor substrate, the deep P-well having a first width;
- a doped P-well disposed over the deep P-well, the doped P-well having a second width that is less than the first width;
- an N-type guard ring formed around the upper surface of the doped P-well;
- and
- a Schottky metal disposed on an upper surface of the doped P-well.
3 more elements
A semiconductor device, comprising:
- a deep P-well having a depth of approximately 2 μm formed in a semiconductor substrate;
- a P-well formed over mid contacting the deep P-well, the P-well having a width dimension less than a width dimension of the deep P-well;
- an N-type guard ring formed in an upper surface of the P-well;
- and
- a Schottky metal disposed over and contacting the P-well and N-type guard ring.
2 more elements
A method, comprising:
- forming a deep P-well over a semiconductor substrate;
- forming a doped P-well over the deep P-well, the doped P-well having a width that is less than a width of the deep P-well;
- forming an N-type guard ring around an upper surface of the doped P-well;
- and
- disposing a Schottky metal on the upper surface of the doped P-well.
2 more elements
Dependencies are inferred from the claim text.