Semiconductor device with vertical channel transistor and method for fabricating the same
OwnerSeung-Chul Ohinventor
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Abstract
A method for fabricating a semiconductor device including a vertical channel transistor includes providing a substrate including a semiconductor pillar, forming a gate electrode surrounding the semiconductor pillar, forming an impurity region for a bit line by doping impurities into the substrate and forming a device isolation trench by etching a portion of the substrate including the impurity region to a certain depth, thereby defining the bit line, wherein the impurity doping is performed with given concentration so as to form the impurity region under the semiconductor pillar.
Claims11
A method for fabricating a semiconductor device including a vertical channel transistor, the method comprising:
- providing a substrate including a semiconductor pillar;
- forming a gate electrode surrounding the semiconductor pillar;
- forming an impurity region for a bit line by doping impurities into the substrate;
- and
- forming a device isolation trench by etching a portion of the substrate including the impurity region to a certain depth, thereby defining the bit line,
- wherein the impurity doping is performed with given concentration so as to form the impurity region under the semiconductor pillar.
A semiconductor device including a vertical channel transistor, the semiconductor device comprising:
- a substrate including a semiconductor pillar;
- a gate electrode surrounding the semiconductor pillar;
- and
- a bit line defined by a device isolation trench and formed by doping impurities into the substrate,
- wherein the doping concentration of the impurities has a given value so as to form the bit line under the semiconductor pillar.
A semiconductor device including a vertical channel transistor, the semiconductor device comprising:
- a substrate including a semiconductor pillar;
- a gate electrode surrounding the semiconductor pillar;
- and
- a bit line bounded by a device isolation trench and formed by doping impurities into the substrate,
- wherein the bit line extends across an entire width of an area of the substrate covered by the semiconductor pillar.
Dependencies are inferred from the claim text.