Flash memory device and method for manufacturing the same

A method for manufacturing a flash memory device, the method comprising:

• forming self-aligned floating gates on a substrate;
• forming bit lines by implanting impurities between the floating gates;
• and
• forming word lines that cross the bit lines.

A method for manufacturing a flash memory device, the method comprising:

• forming a nitride layer pattern on a silicon substrate;
• forming a tunneling oxide layer by oxidizing the silicon substrate having the nitride layer pattern;
• forming floating gates on the tunneling oxide layer, the floating gates being formed at sidewalls of the nitride layer pattern;
• removing the nitride layer pattern from between floating gates formed at the sidewalls of the nitride layer pattern;
• forming bit lines by implanting impurities onto the silicon substrate where the nitride layer pattern has been removed;
• forming an ONO layer over an entire surface of the silicon substrate having the floating gates and the bit lines;
• and
• forming a plurality of word lines on the ONO layer such that the word lines cross the bit lines while being spaced apart from each other at a regular interval.