Flash memory device and manufacturing method of the same

A manufacturing method of a flash memory device, comprising:

• defining an active area by forming a device isolation layer on a semiconductor substrate in which a source plate and a bit line area are defined;
• forming a memory gate over the active area of the bit line area;
• forming a control gate on the semiconductor substrate including the memory gate;
• forming a common source area and a drain area on the semiconductor substrate at respective sides of the control gate, the common source area and the drain area crossing the active area;
• and
• forming a common source line contact over the common source area of the semiconductor substrate at the active area of the source plate,
• wherein the active area of the source plate is formed having the same interval with the active area of the bit line area, and wherein the control gate is formed to cross the source plate and the bit line area disposed at both sides of the source plate.