Semiconductor memory device

A semiconductor memory device comprising:

• a semiconductor substrate;
• a plurality of transistors on the semiconductor substrate;
• a word line connected to a gate of the transistor or serving as the gate;
• a first interlayer film on a source and a drain of the transistor;
• a first plug passing thorough the first interlayer film to be connected to one of the source or the drain of the transistor;
• a second plug passing through the first interlayer film to be connected to the other the source or the drain of the transistor;
• a ferroelectric capacitor comprising a lower electrode above the first plug electrically connected to the first plug, a ferroelectric film on the lower electrode, and an upper electrode on the ferroelectric film;
• a second interlayer film covering a side surface of the ferroelectric capacitor;
• a local interconnection on the second interlayer film connecting the second plug to the upper electrode;
• and
• a bit line connected to the local interconnection, wherein
• the upper electrodes of two ferroelectric capacitors adjacent to each other on the second plug in a direction the bit line extends are connected to the second plug by the local interconnection,
• the lower electrodes of two ferroelectric capacitors adjacent to each other on the first plug in the direction the bit line extends are connected to the first plug,
• a plurality of cell blocks each of which comprises the ferroelectric capacitors connected to each other by the first and the second plugs are arranged,
• two cell blocks adjacent to each other in a direction the word line extends are arranged to be shifted from each other by a half pitch of the local interconnection,
• a first gap between two ferroelectric capacitors adjacent to each other on sides of the second plug in the direction the bit line extends is larger than twice a deposited thickness of the second interlayer film, and
• a second gap between the two cell blocks adjacent to each other in the direction the word line extends is smaller than twice the deposited thickness of the second interlayer film.