Semiconductor device and method of manufacturing the same

An apparatus comprising:

• a semiconductor substrate including a first deep N well defining a CMOS region and a second deep N well defining a bipolar region;
• a first isolation layer formed over said first deep N well;
• a first P well formed over said first deep N well at one side of said first isolation layer;
• an NMOS transistor formed over said first P well and a PMOS transistor formed over said first deep N well at an opposite side of said first isolation layer;
• a second P well formed over said second deep N well exposing a portion of said second deep N well;
• a second isolation layer interposed between said second deep N well and said second P well defining an emitter region;
• an emitter including first type impurities over said second deep N well;
• a third isolation layer defining a base region and a collector region over said second P well;
• a collector including first type impurities over said second P well interposed between said second and third isolation layers;
• and
• a base formed over said second P well at one side of said third isolation layer, comprising a bottom surface including second type impurities to make contact with the emitter.

A method comprising:

• forming first and second deep N wells over a semiconductor substrate defining a CMOS and a bipolar region;
• forming a first isolation layer over said first deep N well defining NMOS and PMOS regions;
• forming second and third isolation layers over said second deep N well defining emitter, collector, and base regions;
• forming a first P well over said first deep N well at one side of said first isolation layer;
• forming a second P well over said second deep N well at one side of said second isolation layer;
• forming a first gate over said first P well and forming a second gate over said first deep N well;
• forming a first source/drain by implanting first type impurities over said first P well, and forming an emitter and a collector by implanting said first type impurities over said emitter region and the collector region;
• and
• forming a second source/drain by implanting second type impurities over said first deep N well, and forming a base by implanting said second type impurities over said base region.