Tunnel field effect transistor and method of manufacturing same

A tunnel field effect transistor comprising:

• a substrate;
• a source region over the substrate;
• a drain region over the substrate;
• a channel region between the source region and the drain region;
• and
• a gate region adjacent to the channel region,
• wherein:
• the source region contains a first semiconducting material;
• the channel region contains a second semiconducting material;
• and
• the second semiconducting material exhibits type-II band alignment with the first semiconducting material.

A method of manufacturing a tunnel field effect transistor, the method comprising:

• providing a substrate;
• selecting a first semiconducting material that has type-II band alignment with a second semiconducting material;
• forming a first semiconducting region containing the first semiconducting material;
• forming a second semiconducting region containing the second semiconducting material;
• forming a third semiconducting region containing a third semiconducting material;
• depositing a gate insulator over at least a portion of at least the first semiconducting region;
• forming a gate electrode over the gate insulator;
• and
• forming a gate contact, a source contact, and a drain contact for the tunnel field effect transistor.

A method of manufacturing a planar tunnel field effect transistor, the method comprising:

• providing a substrate;
• forming a channel region over the substrate;
• defining a gate region over the channel region;
• implanting a first dopant species in order to define a source region and a drain region adjacent to the gate region and in order to form a drain material in the drain region;
• depositing a mask layer over the gate region and the channel region, leaving the source region exposed;
• forming a source material in the source region;
• removing the mask layer;
• and
• forming a gate insulator, source/drain contacts, and a gate electrode,
• wherein:
• the source region and the channel region form a tunneling junction of the planar tunnel field effect transistor along their adjacent sides.