Room temperature-operating single-electron device and the fabrication method thereof

A fabrication method of a room temperature-operating single-electron device, the method comprising:

• a first step of arming an SOI substrate by sequentially stacking an insulating layer 11 and a silicon layer 10 on a silicon substrate 12, and etching the silicon layer 10 of the SOI substrate to thereby form an active region 10a;
• a second step of forming a mask 20 on a central channel portion of the active region 10a, and injecting impurity ions into a part of the active region 10a to form a source region and a drain region;
• a third step of arming a silicon oxide film 30 on the entire top surface of the SOI substrate;
• a fourth step of etching the channel portion of the active region 10a to form a silicide trench 31;
• a fifth step of depositing an oxide film 40 on the entire top surface of the SOI substrate;
• a sixth step of depositing a metal film 42 on the entire top surface of the oxide film;
• a seventh step of thermally treating a part of the metal film 42 to achieve silicidization of the metal dots, and removing the silicon oxide film 30 and the metal film 42 which is not silicidized to form serially-arrayed silicide quantum dots 41;
• an eighth step of depositing gate oxide films 50a and 50b on the entire top surface of the SOI substrate;
• a ninth step of etching a part of the gate oxide films 50a and 50b positioned on the top of a source 13 and a drain 14 formed on both ends of the active region 10a to form each contact hole, and depositing a metal film to fill the contact hole to form a source pad 60 and a drain pad 61;
• and
• a tenth step of forming a resist pattern on the silicide trench 31 to form a gate.