Semiconductor device and method for manufacuring the same
OwnerJin Woo Haninventor
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Abstract
The present invention provides a semiconductor device and a method for manufacturing the same capable of inhibiting plasma damage. A semiconductor device according to one embodiment includes a protective pattern grounded to a semiconductor substrate in a scribe line area, on a wafer including a main chip area and the scribe line area formed around the main chip area. Plasma arching defects to a wafer can be reduced by forming a plasma arching protective pattern in a scribe line region and effectively using the scribe line region in an unused region of the wafer.
Claims16
A semiconductor device comprising:
- a protective pattern grounded to a semiconductor substrate in a scribe line region, on a wafer that includes a main chip region and the scribe line region formed around the main chip region.
A method of manufacturing a semiconductor device, comprising:
- during a process of forming a via metal and a metal wiring of a semiconductor device on a semicondcutor substrate in a main chip region of a wafer, forming a protective pattern of a metal pattern and a protective line in a scribe line region of the wafer, the metal pattern contacting the semiconductor substrate.
A semiconductor device, comprising:
- transistors formed on a semiconductor substrate in a main chip region;
- a metal wiring layer formed on the semiconductor substrate in the main chip region, the metal wiring layer comprising metal wirings connected to the transistors;
- and
- a protective pattern formed on the metal wiring layer in a scribe line region outside the main chip region, wherein the protective pattern is grounded to the semiconductor substrate and is connected to a top layer of the metal wiring layer.
Dependencies are inferred from the claim text.