Semiconductor device and method for fabricating the same

A method for fabricating a semiconductor device, comprising the steps of:

• (a) forming an interlayer insulating film on a semiconductor substrate;
• (b) forming a first inductor interconnect layer having a spiral pattern to be embedded in a top portion of the interlayer insulating film;
• (c) forming a barrier insulating film covering the interlayer insulating film and the first inductor interconnect layer;
• (d) forming at least one connecting groove through the barrier insulating film to extend vertically therethrough and run along the first inductor interconnect layer;
• and
• (e) forming a second inductor interconnect layer on the barrier insulating film to run along the first inductor interconnect layer and fill the connecting groove to be electrically connected with the first inductor interconnect layer,
• wherein
• in the step (e), at least one concave groove is formed on the top of the second inductor interconnect layer to run along the length of the second inductor interconnect layer.