Semiconductor device

Abstract

A semiconductor device suppresses short-circuit failure between a selection gate electrode and a control gate electrode while shortening the distance between the upper portions of the selection gate electrode and the control gate electrode. The device includes an impurity region formed on both sides of a channel region of a semiconductor substrate; a selection gate electrode on the channel region via a gate insulating film; a control gate electrode in the shape of sidewall via a gate isolation insulating film on both side surfaces of the selection gate electrode and on the surface of the channel region; a protective insulating film covering the sidewall of the control gate electrode; and a silicide layer on the selection gate electrode. The protective insulating film is a two-layer structure of a silicon nitride film covering the sidewall of the control gate electrode and a silicon oxide film covering the silicon nitride film.

Dependencies are inferred from the claim text.