US 2010/0147448 A1 · METHODS OF TRANSFERRING A LAMINA TO A RECEIVER ELEMENT

Abstract

Methods for bonding a donor wafer to a receiver element and transferring a lamina from the donor wafer to the receiver element are disclosed herein. The donor wafer may be, for example, a monocrystalline silicon wafer with a thickness of from about 300 microns to about 1000 microns, and the lamina may be may be less than 100 microns thick. The receiver element may be composed of, for example, metal or glass, and the receiver element may have dissimilar thermal expansion properties from the lamina. Although the lamina and the receiver element may have dissimilar thermal expansion properties, the methods disclosed herein maintain the integrity of the bond between the lamina and the receiver element.

Claims24

Dependent claims

A method for securing a lamina to a receiver element, comprising the steps of:

forming a cleave plane within a donor wafer;
heating the donor wafer to a first temperature above room temperature while maintaining the donor wafer generally separate from a receiver element;
heating the receiver element generally to about the first temperature while maintaining the receiver element generally separate from the donor wafer, the receiver element being comprised of a receiver element material;
bonding the donor wafer to the receiver element with the donor wafer at about the first temperature and the receiver element at about the first temperature;
and
exfoliating the donor wafer along the cleave plane by maintaining the donor wafer with receiver element bonded thereto at about the first temperature thereby transferring a lamina from the donor wafer onto the receiver element.

3 more elements

Dependencies are inferred from the claim text.

Methods of transferring a lamina to a receiver element

Life of this patent

Methods of transferring a lamina to a receiver element

Life of this patent

Abstract

Claims24