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US 2010/0144131 A1Published application
Method for producing bonded wafer
AssigneeSumco Corporation
InventorHidehiko Okuda
Life of this patent
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Abstract
A bonded wafer is produced by a step of forming an oxygen ion implanted layer, a step of forming a wafer composite, a step of exposing the oxygen ion implanted layer, and a step of obtaining an active layer, wherein the exposed oxygen ion implanted layer is removed by sequentially subjecting to a first HF treatment, a given oxidation heat treatment, and then a second HF treatment.
Claims3
A method for producing a bonded wafer, comprising
- a step of implanting oxygen ions from a surface of a wafer for active layer to form an oxygen ion implanted layer at a given position inside the wafer for active layer,
- a step of bonding the wafer for active layer to a wafer for support substrate directly or through an insulating layer to form a wafer composite,
- a step of removing a portion of the wafer for active layer in the wafer composite by a given method to expose the oxygen ion implanted layer and
- a step of removing the exposed oxygen ion implanted layer to obtain an active layer of a given thickness, wherein the step of removing the exposed oxygen ion implanted layer is conducted by sequentially subjecting the exposed oxygen ion implanted layer to a first hydrofluoric acid (HF) treatment, a given oxidation heat treatment, and then a second HF treatment.
1 more element
Dependencies are inferred from the claim text.