Semiconductor device manufacturing method
OwnerTatsuhiko Ema, Yuriko Seino +2inventors
InventorsTatsuhiko Ema, Yuriko Seino, Shinichi Ito, Hirokazu Kato
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Abstract
A semiconductor device manufacturing method includes: forming a foundation film on a semiconductor wafer; after forming the foundation film, forming a reaction layer of the semiconductor wafer and the foundation film therebetween; removing the foundation film and leaving the reaction layer on the semiconductor wafer; forming a resist film on the reaction layer; patterning the resist film; and using the patterned resist film as a mask to perform processing on the semiconductor wafer.
Claims20
A semiconductor device manufacturing method comprising:
- forming a foundation film on a semiconductor wafer;
- forming a reaction layer of the semiconductor wafer and the foundation film between the semiconductor wafer and the foundation film after forming the foundation film;
- removing the foundation film and leaving the reaction layer on the semiconductor wafer;
- forming a resist film on the reaction layer;
- patterning the resist film;
- and
- using the patterned resist film as a mask to perform processing on the semiconductor wafer.
A semiconductor device manufacturing method comprising:
- forming a foundation film on a semiconductor wafer;
- removing the foundation film while leaving a portion of the foundation film as an adhesive layer on the semiconductor wafer;
- forming a resist film on the adhesive layer;
- patterning the resist film;
- and
- using the patterned resist film as a mask to perform processing on the semiconductor wafer.
Dependencies are inferred from the claim text.