Flash memory device and manufacruting method the same
OwnerCheon-Man Shiminventor
Life of this patent
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Abstract
A flash memory device and a method of manufacturing a flash memory device. A flash memory device may include a device isolation layer and/or an active area formed on and/or over a semiconductor substrate. A flash memory device may include a memory gate formed on and/or over an active area and/or a control gate formed on and/or over a semiconductor substrate including a memory gate. Active areas may be formed having substantially the same interval with bit lines. A common source line area where a common source line contact may be formed may include a bridge formed between active areas. Neighboring active areas may be connected.
Claims20
An apparatus comprising:
- a device isolation layer and active areas over a semiconductor substrate;
- at least one of a memory gate and a control gate over said semiconductor substrate;
- and
- a common source line area comprising a bridge between said active areas,
- wherein said active areas comprises substantially the same interval as an interval of active areas of a bit line.
A method comprising:
- forming a device isolation layer and active areas over a semiconductor substrate;
- forming at least one of a memory gate and a control gate over said semiconductor substrate;
- and
- forming a common source line area comprising a bridge between said active areas,
- wherein said active areas comprises substantially the same interval as an interval of active areas of a bit line.
Dependencies are inferred from the claim text.