Built-in compliance in test structures for leakage and dielectric breakdown of dielectric materials of metallization systems of semiconductor devices
AssigneeGlobalfoundries Inc.
InventorsOliver Aubel, Frank Feustel, Torsten Schmidt
Life of this patent
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Abstract
In a test structure for determining dielectric breakdown events of a metallization system of semiconductor devices, a built-in compliance functionality may allow reliable switching off of the test voltage prior to causing high leakage currents, which may conventionally result in significant damage. Consequently, further failure analysis may be possible after the occurrence of a dielectric breakdown event.
Claims21
A test structure for monitoring dielectric characteristics of a metallization system of a semiconductor device, said test structure comprising:
- a test region formed above a substrate and comprising a plurality of test metal regions formed in a dielectric material of a metallization level;
- a current limiting structure formed above said substrate;
- and
- an interconnect structure connecting to said test region and to said current limiting structure, said interconnect structure configured to electrically connect said current limiting structure and said test region and to enable application of a voltage within a specified range across said test region and said current limiting structure by an external test device.
A dielectric breakdown test structure, comprising:
- a test region formed in a metallization system of a semiconductor device;
- a resistive structure electrically connected in series with said test region;
- and
- an interconnect structure at least partially formed in said metallization system and electrically connected to said test region and said resistive structure, said interconnect structure being configured to enable electrical contact with an external test device.
A method, comprising:
- providing a test structure comprising a test region for testing dielectric characteristics of a metallization system of a semiconductor device, said test structure further comprising an internal current limiting structure connected in series with said test region;
- applying a voltage across said test region and said current limiting structure;
- monitoring a current flowing through said test region;
- and
- at least reducing said voltage when said current exceeds a predefined threshold.
Dependencies are inferred from the claim text.