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US 2010/0133654 A1Published application
Method for manufacturing capacitor of semiconductor
OwnerHee Han, Kyung-Jun Kim +1inventors
InventorsHee Han, Kyung-Jun Kim, Byung-Kyu Choi
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Abstract
The present invention relates to a method of producing a semiconductor capacitor, and more particularly, to a method of producing a semiconductor capacitor, in which an electroless plating is performed during the production of a lower electrode to form a lower electrode.
Claims16
A method of producing a semiconductor capacitor that comprises preparing a substrate in which a contact plug is formed, forming a lower electrode, and forming a dielectric film and an upper electrode,
- wherein the forming of the lower electrode comprises the steps of:
- 1) forming a conductive film for the lower electrode by using a material for forming a conductive film for the lower electrode;
- 2) patterning the conductive film for the lower electrode of step 1);
- and
- 3) performing an electroless plating on the patterned conductive film for the lower electrode of step 2) to form the lower electrode.
2 more elements
Dependencies are inferred from the claim text.