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US 2010/0075470 A1Published application
Method of manufacturing soi substrate
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsSuguru OZAWA, Atsuo ISOBE, Takashi HAMADA, Junpei MOMO, Hiroaki HONDA, Takashi SHINGU, Tetsuya KAKEHATA
Life of this patent
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Abstract
After a single crystal semiconductor layer provided over a base substrate by attaching is irradiated with a laser beam, characteristics thereof are improved by first heat treatment, and after adding an impurity element imparting conductivity to the single crystal semiconductor layer, second heat treatment is performed at lower temperature than that of the first heat treatment.
Claims22
A method of manufacturing a semiconductor device, comprising:
- irradiating a single crystal semiconductor substrate with ions to form an embrittlement region at a predetermined depth from a surface of the single crystal semiconductor substrate;
- attaching the single crystal semiconductor substrate to a base substrate with an insulating layer interposed therebetween;
- separating the single crystal semiconductor substrate at the embrittlement region to form a single crystal semiconductor layer over the base substrate with the insulating layer interposed therebetween;
- irradiating the single crystal semiconductor layer with a laser beam;
- performing first heat treatment on the single crystal semiconductor layer after irradiating the single crystal semiconductor layer with the laser beam;
- adding an impurity element imparting conductivity to the single crystal semiconductor layer to form impurity regions in the single crystal semiconductor layer after performing the first heat treatment;
- and
- performing second heat treatment on the single crystal semiconductor layer in which the impurity regions are formed at a temperature lower than that of the first heat treatment.
5 more elements
A method of manufacturing a semiconductor device, comprising:
- irradiating a single crystal semiconductor substrate with ions to form an embrittlement region at a predetermined depth from a surface of the single crystal semiconductor substrate;
- attaching the single crystal semiconductor substrate to a base substrate with an insulating layer interposed therebetween;
- separating the single crystal semiconductor substrate at the embrittlement region to form a single crystal semiconductor layer over the base substrate with the insulating layer interposed therebetween;
- irradiating the single crystal semiconductor layer with a laser beam;
- performing first heat treatment on the single crystal semiconductor layer after irradiating the single crystal semiconductor layer with the laser beam;
- forming a gate electrode over the single crystal semiconductor layer with a gate insulating film interposed therebetween after performing the first heat treatment;
- adding an impurity element imparting conductivity to the single crystal semiconductor layer through the gate insulating film to form impurity regions in the single crystal semiconductor layer;
- and
- performing second heat treatment on the single crystal semiconductor layer in which the impurity regions are formed at a temperature lower than that of the first heat treatment.
6 more elements
A method of manufacturing a semiconductor device, comprising:
- irradiating a single crystal semiconductor substrate with ions to form an embrittlement region at a predetermined depth from a surface of the single crystal semiconductor substrate;
- attaching the single crystal semiconductor substrate to a base substrate with an insulating layer interposed therebetween;
- separating the single crystal semiconductor substrate at the embrittlement region to form a single crystal semiconductor layer over the base substrate with the insulating layer interposed therebetween;
- irradiating the single crystal semiconductor layer with a laser beam;
- thinning the single crystal semiconductor layer after irradiating the single crystal semiconductor layer with the laser beam;
- performing first heat treatment on the single crystal semiconductor layer after thinning the single crystal semiconductor layer;
- adding an impurity element imparting conductivity to the single crystal semiconductor layer to form impurity regions in the single crystal semiconductor layer after performing the first heat treatment;
- and
- performing second heat treatment on the single crystal semiconductor layer in which the impurity regions are formed at a temperature lower than that of the first heat treatment.
6 more elements
A method of manufacturing a semiconductor device, comprising:
- irradiating a single crystal semiconductor substrate with ions to form an embrittlement region at a predetermined depth from a surface of the single crystal semiconductor substrate;
- attaching the single crystal semiconductor substrate to a base substrate with an insulating layer interposed therebetween;
- separating the single crystal semiconductor substrate at the embrittlement region to form a single crystal semiconductor layer over the base substrate with the insulating layer interposed therebetween;
- irradiating the single crystal semiconductor layer with a laser beam;
- thinning the single crystal semiconductor layer after irradiating the single crystal semiconductor layer with the laser beam;
- performing first heat treatment on the single crystal semiconductor layer after thinning the single crystal semiconductor layer;
- forming a gate electrode over the single crystal semiconductor layer with a gate insulating film interposed therebetween after performing the first heat treatment;
- adding an impurity element imparting conductivity to the single crystal semiconductor layer through the gate insulating film to form impurity regions in the single crystal semiconductor layer;
- and
- performing second heat treatment on the single crystal semiconductor layer in which the impurity regions are formed at a temperature lower than that of the first heat treatment.
7 more elements
Dependencies are inferred from the claim text.