US 2010/0072558 A1 · METHOD FOR MANUFACTURING HIGH-STABILITY RESISTORS, SUCH AS HIGH OHMIC POLY RESISTORS, INTEGRATED ON A SEMICONDUCTOR SUBSTRATE

Abstract

A method for protecting a circuit component on a semiconductor substrate from a plasma etching or other removal process includes forming a screening layer over an auxiliary layer to conceal at least an area of the auxiliary layer that overlays at least a portion of the circuit component, such as for example a high-ohmic poly resistor. The method transfers a pattern defined by a mask onto the screening layer by selectively removing portions of the screening layer in accordance with the pattern. Portions of the auxiliary layer that are not protected by the screening layer are removed using a plasma gas selective to the auxiliary layer material, without removing the area of the auxiliary layer that overlays the portion of the circuit component, thereby protecting the circuit component from the plasma gas via the screening layer and auxiliary layer.

Claims19

Dependent claims

A system configured to protect a circuit component on a semiconductor substrate from a removal process, the system comprising:

an auxiliary layer overlying top and side surfaces of the circuit component;
a screening layer overlying at least an area of the auxiliary layer overlying the top and side surfaces of the circuit component, the screening layer configured to protect the circuit component from the removal process;
and
a mask configured to define a pattern onto the screening layer, the pattern corresponding to the area of the auxiliary layer overlying the top and side surfaces of the circuit component.

1 more element

Dependencies are inferred from the claim text.

Facts

Application

12/625,418Filed 24 Nov 2009

Priority

21 Dec 2005

Published

25 Mar 2010

Term ends

Not estimatedThe source records don’t support an estimate.

Classification5 codes

H10P 50/267
By vapour etching only: using plasmas
H10D 84/811
Characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs: combinations of…
H10D 84/817
Combinations of field-effect devices and one or more diodes, capacitors or resistors: combinations of field-effect devices and resistors only
H10P
Generic processes or apparatus for the manufacture or treatment of devices covered

Method for manufacturing high-stability resistors, such as high ohmic poly resistors, integrated on a semiconductor substrate

Life of this patent

Method for manufacturing high-stability resistors, such as high ohmic poly resistors, integrated on a semiconductor substrate

Life of this patent

Abstract

Claims19