Method for Removing a Hardened Photoresist

A method for removing a hardened photoresist layer from a substrate comprising a low-κ dielectric material preserving the characteristics of the low-k dielectric material, the method comprising:

• providing a substrate comprising a hardened photoresist layer and a low-κ dielectric material at least partially exposed;
• pre-treating the hardened photoresist with UV radiation having a wavelength between 200 nm and 300 nm in at least one of a vacuum or an inert atmosphere;
• and
• removing the pre-treated hardened photoresist by wet processing with cleaning chemistries comprising ozone.

A method for removing a hardened photoresist layer from a substrate comprising a low-κ dielectric material preserving the characteristics of the low-κ dielectric material, the method comprising:

• providing a substrate comprising a hardened photoresist layer and a low-κ dielectric material at least partially exposed;
• pre-treating the hardened photoresist with UV radiation having a wavelength between 260 nm and 300 nm in the presence of at least one of O2, ozone (O3), or a mixture of O2 and O3;
• and
• removing the pre-treated hardened photoresist by wet processing in cleaning chemistries.