N2 based plasma treatment and ash for hk metal gate protection
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYu Chao Lin, Ryan Chia-Jen Chen, Yih-Ann Lin, Jr Jung Lin
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Abstract
The present disclosure provides a method for making a semiconductor device. The method includes forming a first material layer on substrate; forming a patterned photoresist layer on the first material layer; applying an etching process to the first material layer using the patterned photoresist layer as a mask; and applying a nitrogen-containing plasma to the substrate to remove the patterned photoresist layer.
Claims20
A method for making a semiconductor device comprising:
- forming a first material layer on substrate;
- forming a patterned photoresist layer on the first material layer;
- applying an etching process to the first material layer using the patterned photoresist layer as a mask;
- and
- applying a nitrogen-containing plasma to the substrate to remove the patterned photoresist layer.
A method for making metal gate stacks of a semiconductor device comprising:
- forming a first metal layer on substrate;
- forming a conductive material layer on the first metal layer;
- forming a patterned photoresist layer on the conductive material layer, the patterned photoresist layer defining openings to expose the conductive material layer;
- applying an etching process to the conductive layer and metal layer to remove the metal layer within the openings of the patterned photoresist layer, resulting in a metal gate;
- and
- applying a nitrogen-containing plasma to the substrate to remove the patterned photoresist layer.
A method for making metal gate stacks of a semiconductor device comprising:
- forming a high k dielectric material layer on a substrate;
- forming a metal layer on substrate;
- forming a polysilicon layer on the metal layer;
- forming a patterned photoresist layer on the polysilicon layer;
- applying an etching process to the substrate to remove the polysilicon layer and the metal gate layer using the patterned photoresist layer as a mask;
- and
- applying a nitrogen-containing plasma to the substrate to remove the patterned photoresist layer.
Dependencies are inferred from the claim text.