Manufacturing method of semiconductor device

A manufacturing method of a semiconductor device comprising the steps of:

• forming an insulating film over a bond substrate;
• forming an embrittlement layer by adding ions from a surface of the bond substrate;
• bonding the bond substrate to a glass substrate with the insulating film interposed therebetween;
• separating the bond substrate along the embrittlement layer to form a semiconductor film over the glass substrate with the insulating film interposed therebetween;
• removing a peripheral region of the insulating film and the semiconductor film to expose a part of the glass substrate;
• forming a gate insulating film over and in contact with the semiconductor film, the insulating film, and the glass substrate;
• and
• forming a stacked conductive film with a two-layer structure over and in contact with the gate insulating film,
• wherein the stacked conductive film with the two-layer structure includes a conductive film having a tensile stress in an upper layer and a conductive film having a compressive stress in a lower layer.

A manufacturing method of a semiconductor device comprising the steps of:

• forming a first insulating film over a bond substrate;
• forming an embrittlement layer by adding ions from a surface of the bond substrate;
• forming a second insulating film over a glass substrate;
• bonding the bond substrate to the second insulating film over the glass substrate with the first insulating film interposed therebetween;
• separating the bond substrate along the embrittlement layer to form a semiconductor film over the glass substrate with the first insulating film and the second insulating film interposed therebetween;
• removing a peripheral region of the first insulating film, the second insulating film, and the semiconductor film to expose a part of the glass substrate;
• forming a gate insulating film over and in contact with the semiconductor film, the first insulating film, and the glass substrate;
• and
• forming a stacked conductive film with a two-layer structure over and in contact with the gate insulating film,
• wherein the stacked conductive film with the two-layer structure includes a conductive film having a tensile stress in an upper layer and a conductive film having a compressive stress in a lower layer.

A manufacturing method of a semiconductor device comprising the steps of:

• forming an insulating film over a bond substrate;
• forming an embrittlement layer by adding ions from a surface of the bond substrate;
• bonding the bond substrate to a glass substrate with the insulating film interposed therebetween;
• separating the bond substrate along the embrittlement layer to form a semiconductor film over the glass substrate with the insulating film interposed therebetween;
• removing a peripheral region of the insulating film and the semiconductor film to expose a part of the glass substrate;
• forming a gate insulating film over and in contact with the semiconductor film, the insulating film, and the glass substrate;
• and
• forming a stacked conductive film over and in contact with the gate insulating film,
• wherein the stacked conductive film is formed under such conditions that the stacked conductive film has a stress of 0.1 GPa or lower.

A manufacturing method of a semiconductor device comprising the steps of:

• forming a first insulating film over a bond substrate;
• forming an embrittlement layer by adding ions from a surface of the bond substrate;
• forming a second insulating film over a glass substrate;
• bonding the bond substrate to the second insulating film over the glass substrate with the first insulating film interposed therebetween;
• separating the bond substrate along the embrittlement layer to form a semiconductor film over the glass substrate with the first insulating film and the second insulating film interposed therebetween;
• removing a peripheral region of the first insulating film, the second insulating film, and the semiconductor film to expose a part of the glass substrate;
• forming a gate insulating film over and in contact with the semiconductor film, the first insulating film, and the glass substrate;
• and
• forming a stacked conductive film over and in contact with the gate insulating film,
• wherein the stacked conductive film is formed under such conditions that the stacked conductive film has a stress of 0.1 GPa or lower.