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US 2010/0062578 A1Published application
Bipolar Transistor and Method for Making Same
AssigneeInfineon Technologies AG
InventorDetlef Wilhelm
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Abstract
One or more embodiments of the invention relate to a method of making a heterojunction bipolar transistor, including: forming a collector layer; forming a stack of at least a second dielectric layer overlying a first dielectric layer, the stack formed over the collector layer; removing a portion of each of the dielectric layers to form an opening through the stack; and forming a base layer within the opening.
Claims11
A method of making a heterojunction bipolar transistor, comprising:
- forming a collector layer;
- forming a stack of at least a second dielectric layer overlying a first dielectric layer, said stack formed over said collector layer;
- removing a portion of each of said dielectric layers to form an opening through said stack;
- and
- forming a base layer within said opening.
2 more elements
Dependencies are inferred from the claim text.